Samsung Improves HBM4 Performance And Yield

Samsung is improving performance and yields of its HBM4 high-bandwidth memory chips, reported as using 1c DRAM built on a 10nm-class sixth-generation process to boost speed and efficiency. The company’s HBM4 yield is about 50% and it plans to raise 1c DRAM production from 20,000 to 150,000 wafers monthly by next year while negotiating pricing and qualification with Nvidia ahead of planned mass production in Q2–Q3 2026.
Key Points
- 1Uses 1c DRAM and 10nm-class sixth-generation process to build HBM4 for better speed and efficiency
- 2Needs higher yields because current HBM4 yield is roughly 50%, insufficient for mass production
- 3Plans to scale 1c DRAM capacity from 20,000 to 150,000 wafers monthly to meet Nvidia demand
Scoring Rationale
Significant industry relevance and supply implications; limited by single-source reporting and pending Nvidia qualification results.
Sources
Public references used for this report.
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